As AI drives the urgent need for greater power density, high-voltage Gallium Nitride (GaN) technology has emerged as the future of power conversion. This study presents how Power Integrations’ 1250 V and 1700 V PowiGaN™ switches address the specific requirements of NVIDIA’s 800 VDC AI data center architectures. By utilizing 1250 V GaN solutions, complex stacked topologies can be simplified into a single-stage half-bridge LLC, outperforming 1200 V SiC MOSFETs in terms of efficiency, thermal performance, and Figure of Merit (FOM). The D-Mode Cascode structure further provides a wide gate drive margin and superior reliability compared to E-mode devices. These advancements enable high-frequency operation (up to 1 MHz), delivering a cost-effective, high-density power solution essential for next-generation AI computing infrastructure.